Lithography Recipes

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Lithography Recipes

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Table of Contents Photolithography Processes UV Optical Lithography Stocked Lithography Chemical + Datasheets Lists all stocked photolith. chemicals, PRs, strippers, developers, and links to the chemical's application notes/datasheet, which detail the spin curves and nominal processes. Photo Lithography Recipe section Starting recipes (spin, bake, exposure, develop etc.) for all photolith. tools. Substrate/surface materials/pattern size can affect process parameters. Users may need to run Focus/Exposure Arrays/Matrix (FEA's/FEM's) with these processes to achieve high-resolution. Contact Aligner Recipes Suss MJB Aligners Suss MA6 Stepper Recipes Stepper #1: GCA 6300 (I-Line) Stepper #2: GCA Autostep 200 (I-Line) Stepper #3: ASML PAS 5500/300 (DUV) Direct-Write Recipes Heidelberg MLA150 JEOL JBX-6300FS EBL Raith Velion FIB Automated Coater Recipes (S-Cubed Flexi) General Photolithography Techniques Techniques for improving litho. or solving common photolith. problems. Lift-Off Recipes Verified Recipes for lift-off using various photolith. tools General educational description of this technique and it's limitations/considerations. E-beam Lithography E-Beam Lithography Recipes Has links to starting recipes. Substrates and patterns play a large role in process parameters. EBL Photoresist Datasheets Provided for reference, also showing starting recipes and usage info. Holography For 1-D and 2-D gratings with 220nm nominal period, available on substrates up to 1 inch square. Recipes for silicon substrates are provided, and have been translated to other substrates by users. Datasheets are provided with starting recipes and usage info. Edge-Bead Removal Edge photoresist removal methods needed for clamp-based etchers Improves resolution for contact lithography Photolithography Chemicals/Materials Underlayers These are used beneath resists for both adhesive purposes and to enable bi-layer lift-off profiles for use with photoresist. Datasheets are provided. Anti-Reflection Coatings: The Photoresist Recipes section contains recipes using these materials. Bottom Anti-Reflection Coatings (BARC) are used in the stepper systems, underneath the resists to eliminate substrate reflections that can affect resolution and repeatability for small, near resolution limited, feature sizes. Datasheets are provided for reference on use of the materials. Contrast Enhancement Materials (CEM) The Photoresist Recipes section contains recipes using these materials. Used for resolution enhancement. Not for use in contact aligners, typically used on I-Line Steppers. Datasheets provided with usage info. Adhesion Promoters These are used to improve wetting of photoresists to your substrate. Datasheets are provided on use of these materials. Low-K Spin-on Dielectrics Spin-On Dielectrics Datasheets for BCB, Photo-BCB, and SOG (spin-on-glass) for reference on use. Low-K Spin-On Dielectric Recipes Recipes for usage of some spin-on dielectrics. Developers and Removers Datasheets provided for reference. Remover and Photoresist Strippers are used to dissolve PR during lift-off or after etching. General Photolithography Techniques HMDS Process for Improving Adhesion Use these procedures if you are finding poor adhesion PR lifting-off), or for chemicals (like BHF) that attack the PR adhesion interface strongly. Edge-Bead Removal Techniques These techniques are required for loading full-wafers into etchers that use top-side clamps, to prevent photoresist from sticking to the clamp (and potentially destroying your wafer). For contact lithography, this improves the proximity of the mask plate and sample, improving resolution. For some projection systems, such as the Maskless Aligner, EBR can help with autofocus issues. Photoresist reflow (MicroChem) To create slanted sidewalls or curved surfaces. Photolithography Recipes R: Recipe is available. Clicking this link will take you to the recipe. A: Material is available for use, but no recipes are provided.

Click the tool title to go to recipes for that tool.

Click the photoresist title to get the datasheet, also found in Stocked Chemicals + Datasheets.

Photolithography Recipes Contact Aligner Recipes Stepper Recipes Direct-Write Litho. Recipes Positive Resists SUSS MJB-3 SUSS MA-6 Stepper 1(GCA 6300) Stepper 2(AutoStep 200) Stepper 3(ASML DUV) MLA150(Heidelberg) AZ4110 R R A A R AZ4210 R R A A A AZ4330RS R R A A R AZ4620 A A A A A OCG 825-35CS A A A A A SPR 955 CM-0.9 A R R R R SPR 955 CM-1.8 A A R R A SPR 220-3.0 R R R R R SPR 220-7.0 R R R R A THMR-IP3600 HP D A A R UV6-0.8 R UV210-0.3 R UV26-2.5 A Negative Resists SUSS MJB-3 SUSS MA-6 Stepper 1(GCA 6300) Stepper 2(AutoStep 200) Stepper 3(ASML DUV) MLA150(Heidelberg) AZ5214-EIR R R R R R AZnLOF 2020 R R R R R AZnLOF 2035 A A A A A AZnLOF 2070 A A A A A AZnLOF 5510 A A R R A UVN30-0.8 R SU-8 2005,2010,2015 A R A A A SU-8 2075 A A A A R NR9-1000,3000,6000PY R R A R A Anti-Reflection Coatings SUSS MJB-3 SUSS MA-6 Stepper 1(GCA 6300) Stepper 2(AutoStep 200) Stepper 3(ASML DUV) MLA150(Heidelberg) XHRiC-11 A A A DUV42-P R DS-K101-304 R SUSS MJB-3 SUSS MA-6 Stepper 1(GCA 6300) Stepper 2(AutoStep 200) Stepper 3(ASML DUV) MLA150(Heidelberg) Lift-Off Recipes Lift-Off Description/Tutorial How it works, process limits and considerations for designing your process I-Line Lift-Off: Bi-Layer Process with LOL2000 Underlayer Single Expose/Develop process for simplicity Up to ~130nm metal thickness & ≥500nm-1000nm gap between metal. Can use any I-Line litho tool (GCA Stepper, Contact aligner, MLA) I-Line Lift-Off: Bi-Layer Process with PMGI Underlayer and Contact Aligner Multiple processes for Metal thicknesses ~800nm to ~2.5µm Uses multiple DUV Flood exposure/develop cycles to create undercut. Can be transferred to other I-Line litho tools (Stepper, MLA etc.) DUV Lift-Off: UV6 Imaging Resist + PMGI Underlayer Single-expose/develop process Up to ~65nm metal thickness & ~350nm gap between metal Use thicker PMGI for thicker metals E-Beam Lithography Recipes (JEOL JBX-6300FS) Under Development. FIB Lithography Recipes (Raith Velion)

To Be Added

Automated Coat/Develop System Recipes (S-Cubed Flexi)

Recipes pre-loaded on the S-Cubed Flexi automated coat/bake/develop system. Only staff may write new recipes, contact the tool supervisor for more info.

Ask Staff if you need a new recipe. Coating Material Route/Chain Name: User: "UCSB Users" Spin Speed (krpm) Bake Temp Notes DS-K101 Route DSK101's Develop Rate depends on Bake temp - you can use this to control undercut.

See: DSK Bake vs. Dev rate

Coat-DSK101[5K]-220C 5.0 220°C Requires: HP4=220°C

This is essentailly equivalent to DUV42P @ 220°C, must be dry etched.

Coat-DSK101[5K]-210C 5.0 210°C Requires: HP4=210°C Coat-DSK101[5K]-200C 5.0 200°C Requires: HP4=200°C Coat-DSK101[5K]-185C 5.0 185°C Requires: HP4=185°C UV6-0.8 Route Coat-UV6[2K]-135C 2.0 135°C Requires: HP1=135°C Coat-UV6[2.5K]-135C 2.5 135°C Coat-UV6[3K]-135C 3.0 135°C Coat-UV6[3.5K]-135C 3.5 135°C Coat-UV6[4K]-135C 4.0 135°C Coat-UV6[5K]-135C 5.0 135°C Coat-UV6[6K]-135C 6.0 135°C DS-K101 @ 220°C

+ UV6

Chain Coat-DSK101[5K]-220C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

DSK: 220°C

UV6: 135°C

Requires:

– HP4=220°C

– HP1=135°C

Plan for ~10-15 min per wafer.

Coat-DSK101[5K]-220C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above Coat-DSK101[5K]-220C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above Coat-DSK101[5K]-220C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above Coat-DSK101[5K]-220C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above Coat-DSK101[5K]-220C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above Coat-DSK101[5K]-220C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above DS-K101 @ 185°C

+ UV6

Chain Coat-DSK101[5K]-185C-UV6[2K]-135C DSK: 5krpm

UV6: 2.0krpm

DSK: 185°C

UV6: 135°C

Requires:

– HP4=185°C

– HP1=135°C

Plan for ~10-15 min per wafer.

Coat-DSK101[5K]-185C-UV6[2.5K]-135C DSK: 5krpm

UV6: 2.5krpm

same as above same as above Coat-DSK101[5K]-185C-UV6[3K]-135C DSK: 5krpm

UV6: 3.0krpm

same as above same as above Coat-DSK101[5K]-185C-UV6[3.5K]-135C DSK: 5krpm

UV6: 3.5krpm

same as above same as above Coat-DSK101[5K]-185C-UV6[4K]-135C DSK: 5krpm

UV6: 4.0krpm

same as above same as above Coat-DSK101[5K]-185C-UV6[5K]-135C DSK: 5krpm

UV6: 5.0krpm

same as above same as above Coat-DSK101[5K]-185C-UV6[6K]-135C DSK: 5krpm

UV6: 6.0krpm

same as above same as above Hotplate Set Route SET-HP4-220C 220°C Hotplate 4 (top) between 218-222°C when done. SET-HP4-210C 210°C SET-HP4-200C 200°C SET-HP4-185C 185*C Holography Recipes

The Holography recipes here use the BARC layer XHRiC-11 & the high-res. I-Line photoresist THMR-IP3600HP-D.

Standard Holography Process - on SiO2 on Si Holography Process Variations - Set-up Angle - Etching into SiO2 and Si Etch SiO2 Nano-structure - Changing Side-wall Angle - Etching into Si with a different line-width Reduce SiO2 Nanowire Diameter - Thermal Oxidation - Vapor HF Etching Low-K Spin-On Dielectric Recipes Photo BCB (4024-40) Standard BCB (3022-46) SOG (T512B) Chemicals Stocked + Datasheets

The following is a list of the lithography chemicals we stock in the lab, with links to the datasheets for each. The datasheets will often have important processing info such as spin-speed vs. thickness curves, typical process parameters, bake temps/times etc.

Positive Photoresists

i-line and broadband

AZP4000 (AZ4110, AZ4210, AZ4330) AZ P4620 OCG825 SPR220 (SPR220-3, SPR220-7) SPR955CM (SPR955CM-0.9, SPR955CM-1.8) THMR-3600HP (Thin I-Line & Holography) Evaluation Results: THMR-3600HP Spin Curves for THMR-3600HP Safety Datasheet for THMR-3600HP

DUV-248nm

UV210-0.3 UV6-0.8 UV26-2.5 Negative Photoresists

i-line and broadband

AZ5214 AZnLOF5510 AZnLOF2000 (AZnLOF2020, AZnLOF2035, AZnLOF2070) Futurrex NR9-1000PY(use AZ300MIF dev) Futurrex NR9-3000PY(use AZ300MIF dev) Futurrex NR9-6000PY(use AZ300MIF dev) SU-8-2005,2010, 2015 SU-8-2075

DUV-248nm

UVN-30-0.8 Underlayers PMGI (PMGI SF3,5,8,11,15) Shipley LOL2000 E-beam resists PMMA (PMMA, P(MMA-MAA) copolymer) maN 2403 Nanoimprinting NX1020 MRI-7020 MR-UVCur21 Ormostamp Contrast Enhancement Materials CEM365iS Anti-Reflection Coatings XHRiC-11 (i-line) DUV42P-6 (DUV) (For AR2 replacement) DS-K101-304 (DUV developable BARC) Adhesion Promoters HMDS AP3000 BCB Adhesion Promoter Omnicoat, SU-8 Adhesion Promoter Ormoprime08-Ormostsmp Adhesion Promoter Spin-On Dielectrics

Low-K Spin-On Dielectrics such as Benzocyclobutane and Spin-on Glass

BCB, Cyclotene 3022-46(Not Photosensitive) PhotoBCB, Cyclotene 4022-40(Negative Polarity) BCB Adhesion Notes from Vendor BCB rework Notes from Vendor Spin-on-Glass, Honeywell 512B (Not Photosensitive) Honeywell 512B Apps Data Developers AZ400K (AZ400K, AZ400K1:4) AZ300MIF DS2100 BCB Developer SU-8 Developer 101A Developer (for DUV Flood Exposed PMGI) Photoresist Removers AZ NMP This replaces 1165 AZ300T Remover PG, SU-8 stripper AZ EBR ("Edge Bead Remover", PGMEA)

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