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Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout • 3.3V, 5V, and 15V logic input compatible • Matched propagation delay for both channels • Outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102) • Also available LEAD-FREE HIGH AND LOW SIDE DRIVER Product Summary V OFFSET 600V max. I O +/- 130 mA / 270 mA V OUT 10 - 20V t on/off (typ.) 160 & 150 ns Delay Matching 50 ns IR2101 ( S ) /IR2102 ( S ) & (PbF) Description The IR2101(S)/IR2102(S) are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Pro- prietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. www.irf.com 1 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. IR2102 V CC V B V S HO LO COM HIN LIN LIN HIN up to 600V TO LOAD V CC IR2101 V CC V B V S HO LO COM HIN LIN LIN HIN up to 600V TO LOAD V CC Packages 8-Lead SOIC IR2101S/IR2102S 8-Lead PDIP IR2101/IR2102 |
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