PVA

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PVA-Tepla微波等离子去胶机(兼容SU-8及PI干法去胶)

（PVA TePla IoN Wave 10 Gas Plasma System）

主要用途/ Application：

用于8寸及以下的晶圆（SOI、SI、玻璃、铜片等其他半导体材料）正性及负性光刻胶去胶。聚酰亚胺光刻胶（PI）去胶。有机物去除。基片表面等离子改性（02\Ar）For positive and negative photoresist stripping from up to 8 inch wafers (SOI, SI, glass, copper and other semiconductor materials).Polyimide photoresist stripping (PI).Organic matter removal.Substrate surface plasma modification (02 \ Ar)

设备工作原理简介/ Operating principle：

通过气体发生电离反应用以轰击光刻胶、聚酰亚胺等有机物，以达到去胶目的。

Microwave generates high density plasma to bombard the photoresist, polyimide, and other organic matters, for a complete and fast removal.

工艺能力/ capability：

晶圆尺寸：8寸及以下（含不规则）晶圆材料：SOI、SI、玻璃、铜片等其他半导体材料（具体咨询相关工艺工程师）正性及负性光刻胶去胶。SU-8负性光刻胶去胶。聚酰亚胺光刻胶（PI）去胶。有机物去除。基片表面等离子改性（02\Ar）Wafer size: 8 inches or less (including irregularities)Wafer materials: SOI, SI, glass, copper and other semiconductor materialsPositive and negative photoresist strippingSu-8 negative photoresist strippingPolyimide photoresist stripping (PI)Organic material removalSubstrate surface plasma modification (02 \ Ar)

典型使用案例/ Typical scenario：

SU-8负性光刻胶（100um）去胶图示

Removal of negative photoresist demo SU-8 (100um)