Agilent BA1500半导体参数测试仪与MM探针台

Agilent BA1500半导体参数测试仪与MM探针台

（MM Probe Station and Agilent BA1500 Semiconductor Parameter Analyzer）

主要技术指标/Specifications:

探针台：

Probe station: X-Y axis moving range200mm*200mm,Z axis moving range25mm

High moving precision, resolution of 3.5um

The probe seat accuracy 0.7μm

Heating station：Temperature range is RT~-400℃

半导体参数测试仪

具有4路SMU，其中2路中等功率SMU，2路高分辨率SMU, 可同时测量最小电压分辨率0.5μV、最小电流分辨率0.1fA

DC I-V test:

Four SMUs （2 medium power SMUs, 2 high resolution SMUs）, all SMUs can do test simultaneously

C-V test: frequency 1KHZ~5MHz; bias voltage: ±25V; meas. accuracy:±0.2 %(@1pF, 1MHz

Easy to automatically switch between C-V test and I-V test without affecting measuring accuracy。

提供两路快速IV/脉冲输出，具有任意波形产生功能

最小脉冲宽度：50ns；脉冲电平范围：-5V~+5V，+/-10V~0V (50 Ω负载)；电压测量精度：±0.1%读值, ±0.1% 量程；电流测量精度：±0.1% 读值, ± 0.2% 量程

Pulse IV: supply two rapid IV pulse output and can generate any shape pulse wave

Min. pulse width: 50ns; pulse voltage range: -5V~+5V，+/-10V~0V (50Ωloading)

Voltage meas. accuracy: ±0.1% meas., ±0.1% range; current meas. accuracy: ±0.1% meas., ± 0.2% range

主要用途/Applications:

支持二极管、三极管、MOS管等半导体器件以及材料的直流电流-电压(I-V)测量，准静态和中频电容-电压(C-V)测量，时域测量等。

Parameter characterization of semiconductor devices or optic-electronic devices (e.g., I-V, quasi-static and medium frequency C-V and time-domain, etc.).

Major function：Semiconductor electron device characteristics test.Screw rod bearing to ensure high moving precision, resolution of 3.5um.that can be realized C-V and I-V measurement automatic switching, does not affect the measurement accuracy.