J CRYST GROWTH是SCI几区

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

《Journal Of Crystal Growth》是一本由ELSEVIER出版商出版的专业物理期刊，该刊创刊于1967年，刊期Biweekly，该刊已被国际权威数据库SCI、SCIE收录。在中科院最新升级版分区表中，该刊分区信息为大类学科：材料科学 3区，小类学科：晶体学 3区；物理：应用 3区；材料科学：综合 4区；在JCR（Journal Citation Reports）分区等级为Q3。该刊发文范围涵盖晶体学等领域，旨在及时、准确、全面地报道国内外晶体学工作者在该领域取得的最新研究成果、工作进展及学术动态、技术革新等，促进学术交流，鼓励学术创新。2021年影响因子为1.83，平均审稿速度约2.6个月。