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2SK2255-01MR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
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2SK2255-01MR Datasheet (PDF) ..1. Size:201K fuji 2sk2255-01mr.pdf
2SK2255-01MR N-channel MOS-FETFAP-IIA Series 250V 0,18 18A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converterswww.DataSheet4U.com- General Purpose Power Amplifier> Maximum Ratings and 8.1. Size:169K fuji 2sk2253-01m.pdf
N-channel MOS-FET2SK2253-01MFAP-IIA Series 250V 0,5 8A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv 8.2. Size:180K fuji 2sk2252-01l-01s.pdf
N-channel MOS-FET2SK2252-01L,SFAP-IIA Series 250V 0,5 8A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ 8.3. Size:174K fuji 2sk2258-01.pdf8.4. Size:178K fuji 2sk2257-01.pdf 8.5. Size:178K fuji 2sk2251-01.pdf
N-channel MOS-FET2SK2251-01FAP-IIA Series 250V 2 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivale 8.6. Size:215K inchange semiconductor 2sk2253-01m.pdf
isc N-Channel MOSFET Transistor 2SK2253-01MDESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai 8.7. Size:209K inchange semiconductor 2sk2258.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2258FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER 8.8. Size:222K inchange semiconductor 2sk2257-01.pdf
isc N-Channel MOSFET Transistor 2SK2257-01DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM 8.9. Size:218K inchange semiconductor 2sk2251-01.pdf
isc N-Channel MOSFET Transistor 2SK2251-01DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB 8.10. Size:221K inchange semiconductor 2sk2257.pdf
isc N-Channel MOSFET Transistor 2SK2257DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL |
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