2SJ168 MOSFET Datasheet pdf

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2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs@I = -50 mA D Low on resistance: R = 1.3 (typ.) @ I = -50 mA DS (ON) D Enhancement-

2SJ167 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ167 High Speed Switching Applications Unit: mm Analog Switch Applications Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Y | = 100 mS (min) fs Low on resistance: R = 1.3 (typ.) DS (ON) Enhancement-mode Complementary to 2SK1

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Silicon Junction FETs (Small Signal) 2SJ1642SJ164Silicon P-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SK1104 Features Low ON-resistance Low-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3 :

Silicon Junction FETs (Small Signal) 2SJ1632SJ163Silicon P-Channel JunctionUnit : mmFor general use switching+0.22.8 0.3Complementary with 2SK1103 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1 Low ON-resistance Low-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2

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2SJ160, 2SJ161, 2SJ162Silicon P-Channel MOS FETADE-208-1182 (Z)1st. EditionMar. 2001ApplicationLow frequency power amplifierComplementary pair with 2SK1056, 2SK1057 and 2SK1058Features Good frequency characteristic High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics Equipped with gate protection diode

SMD Type MOSFETP-Channel MOSFET2SJ166SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V)1 2+0.02+0.10.15 -0.020.95-0.1 RDS(ON) 50 (VGS =-4V)+0.11.9-0.2 Comp;ementary to 2SK11321. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source V

SMD Type MOSFETP-Channel MOSFET2SJ166SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) =-50V ID =-0.1 A (VGS =-10V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 50 (VGS =-4V)+0.11.9-0.1 Comp;ementary to 2SK11321. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage