高效n型晶体硅（c - Si）太阳能电池的发展主要依赖于银铝（Ag-Al）浆料金属化的应用。为了深入揭示和阐明 Ag-Al 浆料与p + -Si 发射极之间欧姆接触的形成机制，研究了 Ag/Si 接触界面的微观结构以及烧结过程中 Al 向界面的迁移。结果表明，烧结后的Ag/Si界面含有厚度小于500 nm的玻璃相层，其中嵌入了大量的Ag胶体。这与在p-型c-上通过 Ag 浆料金属化形成的 Ag/Si 接触界面相同硅细胞。与 Ag 浆料相比，Ag-Al 浆料与p +发射极的接触电阻要低得多。电气测试表明，随着 Ag-Al 浆料中 Al 浓度的增加，Ag/Si 接触电阻和 Ag 电极电阻变小。在研究 Al 的作用机理时，扫描电镜图像表明，在烧结过程中，Al 粉末在约 600°C 时溶解在玻璃熔体中，并到达与流动的玻璃熔体的接触界面。当温度超过 700°C 时，Al-Si 在 Ag/Si 接触界面上的相互扩散使 Al 能够进入 Si 衬底。电化学电容-电压测试结果证实，pSi表面中Al的-型掺杂浓度显着增加，导致分流电阻降低。因此，完成了具有显着低接触电阻的Ag/Si欧姆接触的形成。

"点击查看英文标题和摘要"

The development of high-efficiency n-type crystalline silicon (c-Si) solar cells primarily depends on the application of silver–aluminum (Ag–Al) paste metallization. To deeply reveal and clarify the formation mechanism of the ohmic contact between Ag–Al paste and the p+-Si emitter, the microstructure of the Ag/Si contact interface and the migration of Al to the interface during sintering were investigated. The results showed that the sintered Ag/Si interface contained a glass phase layer with a thickness less than 500 nm, in which a large number of Ag colloids were embedded. This is the same as the Ag/Si contact interface formed by Ag paste metallization on p-type c-Si cells. Compared with Ag paste, Ag–Al paste provides a considerably lower contact resistance with the p+ emitter. Electrical tests revealed a smaller Ag/Si contact resistance and higher Ag electrode resistance with increasing Al concentrations in the Ag–Al paste. In the study of the action mechanism of Al, scanning electron microscopy images illustrated that during sintering, Al powder dissolves in the glass melt at ~ 600°C and reaches the contact interface with the flowing glass melt. As the temperature exceeded 700°C, the mutual diffusion of Al-Si across the Ag/Si contact interface enables Al to enter the Si substrate. The electrochemical capacitance–voltage test results confirmed that the p-type doping concentration of Al in the Si surface significantly increased, leading to a reduction in the shunt resistance. Consequently, the formation of Ag/Si ohmic contact with significantly low contact resistance was completed.