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片内Flash的认识

2023-08-14 22:00| 来源: 网络整理| 查看: 265

The Flash memory erase operation can be performed at page level or on the whole Flash area (mass-erase). The mass-erase does not affect the information blocks.

    

                                                                  图4 Flash module organization (medium-density devices)

四、Flash相关寄存器

Flash寄存器在内存的映射如下[1]:

                                                                   

Flash各寄存器具体地址如下[2]:

                

                                                              图6 Flash memory interface registers of medium-density devices

具体到各寄存器功能,位含义,得参考[3],Flash寄存器映射如下:

五、Information block

Flash中Information block在内存映射如下[1]:

                                                                     

具体的Flash的Information block地址如下:

           

                                                                   图9 Information block of medium-density devices

System memory包含一段引导程序(当系统从片上Flash启动会用到),Flash出厂后就不能修改,不晓得我理解得对不对,贴出原文如下[3]:

System memory is used to boot the device in System memory boot mode. The area is reserved for use by STMicroelectronics and contains the boot loader which is used to reprogram the Flash memory using the USART1 serial interface. It is programmed by ST when the device is manufactured, and protected against spurious write/erase operations. For further details please refer to AN2606.

 

The option bytes are managed by an embedded Flash Program/Erase Controller (FPEC),详情见[3]。



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