陆叶

Selected Journal Publications:

15. Wennan Hu, Yunlin Liu, Zhangcheng Huang, Jianguo Dong, Yue Wang, Weiao Chen, Zhe Sheng, Haoran Sun, Guangxi Hu, Chunxiao Cong, David Wei Zhang, Ye Lu*, Peng Zhou* and Zengxing Zhang*; "Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits", J. Phys. D: Appl. Phys. 56 (2023) 355106

14.  Xiaona Zhu, Rongzheng Ding, Ouwen Tao, Yage Zhao, Peishun Tang, David Wei Zhang, Ye Lu*, Shaofeng Yu; "A combined N/PFET Complementary FET based design and technology framework for CMOS applications";  IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (TCAD), 42, 12, 4999 (2023)

13.       Jinxin Zhang, Jiarui Bao, Zhangcheng Huang, Xuan Zeng, Ye Lu; "Automated Design of Complex Analog Circuits with Multiagent based Reinforcement Learning"; 60th IEEE Design Automation Conference (DAC), San Francisco, July 9th - 11th, (2023)

12.       Yunlin Liu,Xiaohe Huang,Kun Luo, Zhenhua Wu,Yan Liu,Chunsen Liu,Guangxi Hu,Peng Zhou and Ye Lu; "A Quantum Corrected Compact Model of Experimentally Fabricated GAA 2D MBCFETs"; IEEE Transactions on Electron Devices (TED), 70, 3, 891(2023)

11.       Guodong Qi, Xinyu Chen, Guangxi Hu, Peng Zhou,Wenzhong Bao& Ye Lu; "Knowledge-Based Neural Network SPICE Modeling for MOSFETs and Its Application on 2D Material Field-Effect Transistors"; Science China Information Sciences, 66,122405 (2023)

10.       Guodong Qi, Weizhuo Gan, Lijun Xu, Jiangtao Liu, Qihang Yang, Xiaona Zhu, Jiuren Zhou, Xinyu Ma, Guangxi Hu, Tao Chen, Shaofeng Yu, Zhenhua Wu*, Huaxiang Yin, and Ye Lu* " The Device and Circuit Level Benchmark of Si-based Cold Source FETs for Future Logic Technology"; IEEE Transactions on Electron Devices (TED), 69,3483 (2022)

9.       Qihang Yang , Guodong Qi , Weizhuo Gan , Zhenhua Wu ,,Huaxiang Yin , Tao Chen ,Guangxi Hu , Jing Wan , Shaofeng Yu , and Ye Lu "Transistor Compact Model Based on Multi-gradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs"; IEEE Transactions on Electron Devices (TED), 68,4181 (2021)

8.       Weizhuo Gan, Kun Luo, Guodong Qi, Rapha¨ el J. Prentki, Fei Liu, Jiali Huo, Weixing Huang, Jianhui Bu,Qingzhu Zhang, Huaxiang Yin, Hong Guo, Ye Lu and Zhenhua Wu "A Multi-scale Simulation Framework for Steep-Slope Si Nanowire Cold Source FET"; IEEE Transactions on Electron Devices (TED),68,5455 (2021)

7.       Pragya Kushwaha, Harshit Agarwal,Yen-Kai Lin, Avirup Dasgupta,Ming-Yen Kao, Ye Lu, Yun Yue, Xiaonan Chen, Joseph Wang,Wing Sy, Frank Yang, PR. Chidi Chidambaram , Sayeef Salahuddin,and Chenming Hu; "Characterization and Modeling of flicker noise in advanced FinFETs";  IEEE Electron Device Letters (EDL), 40,985 (2019）(*I am the Corresponding author of this paper)  

6.       S. Ramey, Y. Lu, I. Meric, S. Mudanai, S. Novak, C. Prasad, J. Hicks "Aging model challenges in deeply scaled tri-gate technologies"; IEEE International Integrated Reliability Workshop Proceeding (IIRW),(2016)

5.       Anna P. Schall,Patrizia Iavicoli,Zhengqing John Qi,Julien Menko,Ye Lu, Mathieu Linares, Julio C. de Paula, David B. Amabilino, A. T. Johnson and Walter F.Smith;"Photoconductivity of Nanofilaments that are Selfassembled from a Porphyrin"; The Journal of Physical Chemistry C, 119, 26154 (2015)

4.       Sung-Wook Nam,Hee-Suk Chung,Yu Chieh Lo,Liang Qi,Ju Li,Ye Lu,A.T. Charlie Johnson,Yeonwoong Jung,Pavan Nukala,Ritesh Agarwal;"Electrical wind force-driven and dislocationtemplated amorphization in Phase-Change Nanowires"; Science, 336, 1561 (2012)

3.   Ye Lu, Mitchell B. Lerner, Zhengqing John Qi, Joseph J. Mitala Jr, Jong Hsien Lim, Bohdana M. Discher, and A. T. Charlie Johnson;"Graphene-protein bioelectronic devices with wavelength-tunable photoresponse"; Applied Physics Letters,100,033110(2012)

2.   Ye Lu,Christopher A. Merchant,Marija Drndić,and A. T. Charlie Johnson; "In-situ electronic characterization of graphene nanoconstriction fabricated in a transmission electron microscope"; Nano Letters, 11, 5184 (2011)

1.   Ye Lu,Brett Goldsmith,Douglas R. Strachan,Jong Hsien Lim,Zhengtang Luo,A. T. Charlie Johnson; "High on/off ratio graphene nanoconstriction field effect transistors"; Small, 6, 2748 (2010)

Selected U.S. PATENTs:

1. Ye Lu et al “Enhanced MOS devices for RF design in 14nm FinFET technology” U.S. PCT 15/816,295 (2018) 

2. Ye Lu et al “ High Q-Factor Fin MOS varactor with optimized number of Fins” U.S. PCT 15/816,295 (2017) 

3. Ye Lu et al “SAC on active gate for improve MOS varactor Q” U.S. PCT 15/686,827 (2017)